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Proceedings Paper

Registration measurement capability of VISTEC LMS IPRO4 with focus on small features
Author(s): Christian Enkrich; Gunter Antesberger; Oliver Loeffler; Klaus-Dieter Roeth; Frank Laske; Karl-Heinrich Schmidt; Dieter Adam
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Paper Abstract

The development of the 45-nm node manufacturing process at leading edge mask shops is nearly finished. In order to reach the required registration measurement performance with a precision to tolerance value of P/T=0.25, the measurement error may not exceed 1.2 nm according to ITRS roadmap. This requires the latest generation of registration measurement tools. In addition, the demand for measuring very small features increases - for standard pattern placement measurements, as well as special engineering tasks, e.g., the position measurement of single contact holes. In this work, the error of pattern placement measurement on an LMS IPRO4 is determined using an analysis of variance methodology (ANOVA). In addition we analyze the capability as a function of the critical dimension (CD) of the registration feature. The results are compared to the previous tool generation.

Paper Details

Date Published: 19 May 2008
PDF: 9 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282Y (19 May 2008); doi: 10.1117/12.793104
Show Author Affiliations
Christian Enkrich, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Gunter Antesberger, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Oliver Loeffler, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Klaus-Dieter Roeth, Vistec Semiconductor Systems GmbH (Germany)
Frank Laske, Vistec Semiconductor Systems GmbH (Germany)
Karl-Heinrich Schmidt, Vistec Semiconductor Systems GmbH (Germany)
Dieter Adam, Vistec Semiconductor Systems GmbH (Germany)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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