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The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node
Author(s): Hyemi Lee; Goomin Jeong; Kangjun Seo; Sangchul Kim; changreol kim
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Paper Abstract

Since mask design rule is smaller and smaller, Defects become one of the issues dropping the mask yield. Furthermore controlled defect size become smaller while masks are manufactured. According to ITRS roadmap on 2007, controlled defect size is 46nm in 57nm node and 36nm in 45nm node on a mask. However the machine development is delayed in contrast with the speed of the photolithography development. Generally mask manufacturing process is divided into 3 parts. First part is patterning on a mask and second part is inspecting the pattern and repairing the defect on the mask. At that time, inspection tools of transmitted light type are normally used and are the most trustful as progressive type in the developed inspection tools until now. Final part is shipping the mask after the qualifying the issue points and weak points. Issue points on a mask are qualified by using the AIMS (Aerial image measurement system). But this system is including the inherent error possibility, which is AIMS measures the issue points based on the inspection results. It means defects printed on a wafer are over the specific size detected by inspection tools and the inspection tool detects the almost defects. Even though there are no tools to detect the 46nm and 36nm defects suggested by ITRS roadmap, this assumption is applied to manufacturing the 57nm and 45nm device. So we make the programmed defect mask consisted with various defect type such as spot, clear extension, dark extension and CD variation on L/S(line and space), C/H(contact hole) and Active pattern in 55nm and 45nm node. And the programmed defect mask was inspected by using the inspection tool of transmitted light type and was measured by using AIMS 45-193i. Then the marginal defects were compared between the inspection tool and AIMS. Accordingly we could verify whether defect size is proper or not, which was suggested to be controlled on a mask by ITRS roadmap. Also this result could suggest appropriate inspection tools for next generation device among the inspection tools of transmitted light type, reflected light type and aerial image type.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282V (19 May 2008); doi: 10.1117/12.793101
Show Author Affiliations
Hyemi Lee, Hynix Semiconductor Inc. (South Korea)
Goomin Jeong, Hynix Semiconductor Inc. (South Korea)
Kangjun Seo, Hynix Semiconductor Inc. (South Korea)
Sangchul Kim, Hynix Semiconductor Inc. (South Korea)
changreol kim, Hynix Semiconductor.Inc (South Korea)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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