Share Email Print
cover

Proceedings Paper

Increasing the predictability of AIMS measurements by coupling to resist simulations
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper studies the application of resist models to AIMSTM images. Measured AIMSTM data were coupled with resist simulations of the Fraunhofer IISB research and development lithography simulator Dr.LiTHO and with a compact resist model developed by Carl Zeiss SMS. Through-focus image data of the AIMSTM are transformed into a bulk image--the intensity distribution within the resist. This bulk image is used to compute the concentration of photo-acid after exposure and the following resist processing. In the result a resist profile is obtained, which can be used to extract the printed wafer linewidth and other data. Additionally, a compact resist model developed by Carl Zeiss SMS was directly applied to the AIMSTM data. The described procedures are used to determine dose latitudes for lines and spaces with different pitches. The obtained data are compared to actual wafer prints for a 1.2 NA system.

Paper Details

Date Published: 19 May 2008
PDF: 9 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282S (19 May 2008); doi: 10.1117/12.793098
Show Author Affiliations
Balint Meliorisz, Friedrich-Alexander Univ. Erlangen-Nuremberg (Germany)
Fraunhofer-Institute of Integrated Systems and Device Technology (Germany)
Andreas Erdmann, Fraunhofer-Institute of Integrated Systems and Device Technology (Germany)
Thomas Schnattinger, Fraunhofer-Institute of Integrated Systems and Device Technology (Germany)
Ulrich Ströβner, Carl Zeiss SMS GmbH (Germany)
Thomas Scherübl, Carl Zeiss SMS GmbH (Germany)
Peter De Bisschop, IMEC (Belgium)
Vicky Philipsen, IMEC (Belgium)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

© SPIE. Terms of Use
Back to Top