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Proceedings Paper

In-situ chamber clean for chromium etch application
Author(s): Zhigang Mao; Xiaoyi Chen; David Knick; Michael Grimbergen; Madhavi Chandrahood; Ibrahim Ibrahim; Ajay Kumar
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Paper Abstract

As technology advances with feature size shrinking for the state-of-the-art integrated circuit (IC) fabrication, the degree of reduction in critical dimension (CD) features on a photomask shrinks at a faster pace, thanks to the ever aggressive optical proximity correction (OPC) design. In addition to stringent CD requirement, defect control has also become one of the most difficult challenges for advanced photomask manufacturing as a result of reduction in printable defect size. Therefore, keeping a photomask etching chamber at an optimal condition becomes very critical for controlling in both defectivity and CD fidelity. In the present study, analyses on optical emission spectrum (OES) collected in an Applied Materials' TetraTM chrome etch module have been performed to understand (1) the impact of Cr etching on the chamber condition, and (2) the effectiveness of in-situ chamber dry clean for chamber condition control and potential particle reduction. Results showed that, with the right selection of chamber materials (to be compatible with process chemistry and etching condition), the main impact of Cr etching on chamber condition and particle performance is from resist etch-by-products. Various plasma dry clean chemistries have been explored to address the effectiveness for the removal of such etch-by-products. As a result, an in-situ chamber clean (ICC) procedure is developed and has been validated to be production-worthy for desired particle control and chamber stability control.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702823 (19 May 2008); doi: 10.1117/12.793080
Show Author Affiliations
Zhigang Mao, Applied Materials (United States)
Xiaoyi Chen, Applied Materials (United States)
David Knick, Applied Materials (United States)
Michael Grimbergen, Applied Materials (United States)
Madhavi Chandrahood, Applied Materials (United States)
Ibrahim Ibrahim, Applied Materials (United States)
Ajay Kumar, Applied Materials (United States)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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