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Proceedings Paper

Optimization of measuring conditions for templates of UV nano imprint lithography
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Paper Abstract

Templates for UV-Nano-imprint lithography (NIL) have been rapidly improved these days. Feature sizes of the templates have come to be less than 30 nm. Consequently, metrology has been also one of the challenges to fabricate templates for UV-NIL. There are many issues in metrology for the templates; for instance, necessity of the higher resolution, critical dimension (CD) accuracy and repeatability for measurement tools. In this paper, we will focus on an optimization of measuring conditions for the templates of UV-NIL. And we will discuss some measuring techniques for CD precision and repeatability using a CD-SEM and a scanning probe microscope.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281V (19 May 2008); doi: 10.1117/12.793072
Show Author Affiliations
Kouji Yoshida, Dai Nippon Printing Co., Ltd. (Japan)
Kouichirou Kojima, Dai Nippon Printing Co., Ltd. (Japan)
Makoto Abe, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Masaaki Kurihara, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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