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Proceedings Paper

The study to optimize CD uniformity by reliable area CD measurement on 45nm D/R DRAM
Author(s): Yongkyoo Choi; Sunghyun Oh; Munsik Kim; Yongdae Kim; Changreol Kim
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Paper Abstract

As design rule of memory device is shrinking, the various errors obtained by process, such as line edge roughness, local CD variation and electron beam shot placement error, are significant to CD measurement results on mask and wafer. Reliable CD measurement is needed to represent real feature size of mask and wafer results in high accurate CD target and uniformity by various CD correction techniques before mask fabrication and after. Recently light transmittance control technique on mask has been introduced, which reduce the field CD variation of wafer [1]. To correct the wafer field CD uniformity by selective control of the light transmittance of mask, good correlation of mask CD and wafer field CD is important [2][3]. AIMS (aerial image measurement and simulation) or light intensity uniformity of inspection tools or other light intensity measurement tools are generally used to measure mask CD uniformity on mask. In this study, mask CD uniformity measured by CD-SEM was used to compensate the field CD variation on wafer, by enhancing the correlation between wafer field CD uniformity and mask using spatial filtering of SEM image and area CD measurement concept. Expected residual error of wafer field CD error using correction of mask CD uniformity were compared to wafer CD variation by selective light correction using wafer CD uniformity map.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281O (19 May 2008); doi: 10.1117/12.793065
Show Author Affiliations
Yongkyoo Choi, Hynix Semiconductor (South Korea)
Sunghyun Oh, Hynix Semiconductor (South Korea)
Munsik Kim, Hynix Semiconductor (South Korea)
Yongdae Kim, Hynix Semiconductor (South Korea)
Changreol Kim, Hynix Semiconductor (South Korea)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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