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Proceedings Paper

Controlling phase induced CD non-uniformity effects of PSM photo-masks
Author(s): Dan Rost; Michael Ben-Yishai; Lior Shoval; Christophe Couderc
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Paper Abstract

Aggressive line width and other features of interest in advanced-technology node designs are achieved by using pattern-related resolution enhancement techniques (RET) coupled with mask transmission effects. Mask transmission effects, such as phase shift, are controlled by physical parameters, including mask blank material characteristics and mask architecture. In the case of advanced phase shift masks, the uniformity of transmitted phase, affected by both material properties and thickness, can become a dominant factor in achieving the final wafer CD targets. While traditional mask inspection tools are capable of detecting geometrical variation, detecting phase non-uniformity effects requires complementary, slow analytical tools. AMAT's IntenCDTM is a novel application for advanced PSM masks which can be used for CD variation control in mask qualification. IntenCD captures mask CD variations in the aerial image regardless of the geometrical or physical aspect of its origin, producing a high-definition CDU map of the reticle. In this paper, we focus on a case study encountered at MP Mask where a PSM mask was sent to the fab to confirm large CD variations on a printed wafer due to mask etching process issues. Conventional defect inspection was not capable of detecting this excursion. The effect was clearly related to phase layer thickness as verified using an Atomic Force Microscope (AFM) tool. We show how the novel IntenCD application integrated into the aerial image mask inspection tool enables accurate prediction of CD variation in the aerial image due to mask phase errors.

Paper Details

Date Published: 19 May 2008
PDF: 10 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281L (19 May 2008); doi: 10.1117/12.793062
Show Author Affiliations
Dan Rost, Mask Technology Ctr., LLC (United States)
Michael Ben-Yishai, Applied Materials (Israel)
Lior Shoval, Applied Materials (Israel)
Christophe Couderc, Applied Materials (Israel)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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