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Proceedings Paper

IntenCD: an application for CD uniformity mapping of photomask and process control at maskshops
Author(s): Heebom Kim; MyoungSoo Lee; Sukho Lee; Young-Su Sung; Byunggook Kim; Sang-Gyun Woo; HanKu Cho; Michael Ben Yishai; Lior Shoval; Christophe Couderc
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Paper Abstract

Lithographic process steps used in today's integrated circuit production require tight control of critical dimensions (CD). With new design rules dropping to 32 nm and emerging double patterning processes, parameters that were of secondary importance in previous technology generations have now become determining for the overall CD budget in the wafer fab. One of these key parameters is the intra-field mask CD uniformity (CDU) error, which is considered to consume an increasing portion of the overall CD budget for IC fabrication process. Consequently, it has become necessary to monitor and characterize CDU in both the maskshop and the wafer fab. Here, we describe the introduction of a new application for CDU monitoring into the mask making process at Samsung. The IntenCDTM application, developed by Applied Materials, is implemented on an aerial mask inspection tool. It uses transmission inspection data, which contains information about CD variation over the mask, to create a dense yet accurate CDU map of the whole mask. This CDU map is generated in parallel to the normal defect inspection run, thus adding minimal overhead to the regular inspection time. We present experimental data showing examples of mask induced CD variations from various sources such as geometry, transmission and phase variations. We show how these small variations were captured by IntenCDTM and demonstrate a high level of correlation between CD SEM analysis and IntenCDTM mapping of mask CDU. Finally, we suggest a scheme for integrating the IntenCDTM application as part of mask qualification procedure at maskshops.

Paper Details

Date Published: 19 May 2008
PDF: 6 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281K (19 May 2008); doi: 10.1117/12.793061
Show Author Affiliations
Heebom Kim, Samsung Electronics Co., Ltd. (South Korea)
MyoungSoo Lee, Samsung Electronics Co., Ltd. (South Korea)
Sukho Lee, Samsung Electronics Co., Ltd. (South Korea)
Young-Su Sung, Samsung Electronics Co., Ltd. (South Korea)
Byunggook Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
HanKu Cho, Samsung Electronics Co., Ltd. (South Korea)
Michael Ben Yishai, Applied Materials (Israel)
Lior Shoval, Applied Materials (Israel)
Christophe Couderc, Applied Materials (Israel)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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