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Proceedings Paper

Prevention of chemical residue from growing into Haze defect on PSM pattern edge after normal cleaning process
Author(s): Jaehyuck Choi; Jin-sik Jung; Han-shin Lee; Jongkeun Oh; Soojung Kang; Haeyong Jeong; Yonghoon Kim; HanKu Cho
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Paper Abstract

It is known that PSM pattern edge (MoSiON/Qz boundary) of EA-PSM mask is the weakest point against Haze occurrence in real mass production. Based on the understanding of these phenomena, we have developed very efficient ways to protect PSM pattern edge from Haze defect formation even after normal SPM cleaning processes. Oxide layer formulated on the PSM pattern (including pattern top and side) is actively trapping chemical ions existing on the surface and inside bulk of mask substrate, preventing their motion or diffusion toward Haze defect creation during laser exposure. As a result, we are able to reduce cleaning frequency of each EA-PSM mask set without Haze issues and thereby dramatically expand their life time in real mass production.

Paper Details

Date Published: 19 May 2008
PDF: 9 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702818 (19 May 2008); doi: 10.1117/12.793049
Show Author Affiliations
Jaehyuck Choi, Samsung Electronics Co., Ltd. (South Korea)
Jin-sik Jung, Samsung Electronics Co., Ltd. (South Korea)
Han-shin Lee, Samsung Electronics Co., Ltd. (South Korea)
Jongkeun Oh, Samsung Electronics Co., Ltd. (South Korea)
Soojung Kang, Samsung Electronics Co., Ltd. (South Korea)
Haeyong Jeong, Samsung Electronics Co., Ltd. (South Korea)
Yonghoon Kim, Samsung Electronics Co., Ltd. (South Korea)
HanKu Cho, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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