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Impact of patterning strategy on mask fabrication beyond 32nm
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Paper Abstract

Mask specifications of the pitch splitting type double patterning for 22nm node and beyond in logic devices have been discussed. The influences of the mask CD error and the mask induced overlay error on wafer CD have been investigated in both cases of bright field and dark filed. The specification for intra-layer overlay alignment is much smaller than inter-layer one. The specification of mask CD uniformity for dark is more challenging. In order to overcome the technology gap between single patterning and double patterning, many things will have to be improved.

Paper Details

Date Published: 19 May 2008
PDF: 9 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702814 (19 May 2008); doi: 10.1117/12.793045
Show Author Affiliations
Shoji Mimotogi, Toshiba Corp. (Japan)
Tomotaka Higaki, Toshiba Corp. (Japan)
Hideki Kanai, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)
Masaki Satake, Toshiba Corp. (Japan)
Yosuke Kitamura, Toshiba Corp. (Japan)
Katsuyoshi Kodera, Toshiba Corp. (Japan)
Kazutaka Ishigo, Toshiba Corp. (Japan)
Takuya Kono, Toshiba Corp. (Japan)
Masafumi Asano, Toshiba Corp. (Japan)
Kazuhiro Takahata, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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