Share Email Print

Proceedings Paper

32 nm imprint masks using variable shape beam pattern generators
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL ®) is a unique method that has been designed from the beginning to enable precise overlay for creating multilevel devices. A photocurable low viscosity monomer is dispensed dropwise to meet the pattern density requirements of the device, thus enabling imprint patterning with a uniform residual layer across a field and across entire wafers. Further, S-FIL provides sub-100 nm feature resolution without the significant expense of multi-element, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x templates with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub 32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the template is discussed and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

Paper Details

Date Published: 19 May 2008
PDF: 10 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280R (19 May 2008); doi: 10.1117/12.793034
Show Author Affiliations
Kosta Selinidis, Molecular Imprints, Inc. (United States)
Ecron Thompson, Molecular Imprints, Inc. (United States)
Gerard Schmid, Molecular Imprints, Inc. (United States)
Nick Stacey, Molecular Imprints, Inc. (United States)
Joseph Perez, Molecular Imprints, Inc. (United States)
John Maltabes, Molecular Imprints, Inc. (United States)
Douglas J. Resnick, Molecular Imprints, Inc. (United States)
Jeongho Yeo, Samsung Electronics Co., Ltd. (South Korea)
Hoyeon Kim, Samsung Electronics Co., Ltd. (South Korea)
Ben Eynon, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

© SPIE. Terms of Use
Back to Top