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Proceedings Paper

Damage analysis of EUV mask under Ga focused ion beam irradiation
Author(s): Yasushi Nishiyama; Tsuyoshi Amano; Hiroyuki Shigemura; Tsuneo Terasawa; Osamu Suga; Tomokazu Kozakai; Syuichi Kikuchi; Kensuke Shiina; Anto Yasaka; Ryoji Hagiwara
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Paper Abstract

EUV mask damage caused by Ga focused ion beam irradiation during the mask defect repair was studied. The concentration of Ga atom implanted in the multilayer through the buffer layer was calculated by SRIM. The reflectivity of the multilayer was calculated from the Ga distribution below the capping layer surface. To validate the calculation, a multilayer sample was irradiated with Ga FIB, and then EUV reflectivity was measured. The measured reflectivity change was in good agreement with the calculated value. An aerial image of patterns with Ga implanted region was simulated. The impact of the estimated Ga absorption on the linewidth of 32 nm hp line pattern was found to be less than 1 nm.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280J (19 May 2008); doi: 10.1117/12.793026
Show Author Affiliations
Yasushi Nishiyama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuyoshi Amano, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Syuichi Kikuchi, SII NanoTechnology Inc. (Japan)
Kensuke Shiina, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Ryoji Hagiwara, SII NanoTechnology Inc. (Japan)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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