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Proceedings Paper

Modeling of charging effect and its correction by EB mask writer EBM-6000
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Paper Abstract

The impending need of double patterning/double exposure techniques is accelerating the demand for higher pattern placement accuracy to be achieved in the upcoming lithography generations. One of the biggest error sources of pattern placement accuracy on an EB mask writer is the resist charging effect. In this paper, we provide a model to describe the resist charging behavior on a photomask written on our EBM-6000 system. We found this model was very effective in correcting and reducing the beam position error induced by the charging effect.

Paper Details

Date Published: 19 May 2008
PDF: 12 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280C (19 May 2008); doi: 10.1117/12.793020
Show Author Affiliations
Noriaki Nakayamada, NuFlare Technology, Inc. (Japan)
Seiji Wake, NuFlare Technology, Inc. (Japan)
Takashi Kamikubo, NuFlare Technology, Inc. (Japan)
Hitoshi Sunaoshi, NuFlare Technology, Inc. (Japan)
Shuichi Tamamushi, NuFlare Technology, Inc. (Japan)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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