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Proceedings Paper

Advanced damage-free photomask cleaning for 45/32nm technology nodes
Author(s): Roman Gouk; Jason Jeon; Fred Li; James Papanu; Banqiu Wu; Rao Yalamanchili
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Paper Abstract

High particle removal efficiency (PRE) up to 99%+ without damage to sub-50 nm linewidth features has been demonstrated using a mixed fluid jet technology and sulfur-free chemistry. This high PRE was achieved with several types of deposited particles, including polystyrene latex spheres. Damage-free cleaning was demonstrated on binary and phase shift masks with Cr and MoSi structures. All masks were processed using the TetraTM mask cleaning tool configured with the NanoDropletTM mixed fluid jet technology.

Paper Details

Date Published: 19 May 2008
PDF: 6 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702808 (19 May 2008); doi: 10.1117/12.793017
Show Author Affiliations
Roman Gouk, Applied Materials (United States)
Jason Jeon, Applied Materials (United States)
Fred Li, Applied Materials (United States)
James Papanu, Applied Materials (United States)
Banqiu Wu, Applied Materials (United States)
Rao Yalamanchili, Applied Materials (United States)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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