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Proceedings Paper

Photomask technology for 32nm node and beyond
Author(s): Ryugo Hikichi; Hiroyuki Ishii; Hidekazu Migita; Noriko Kakehi; Mochihiro Shimizu; Hideyoshi Takamizawa; Tsugumi Nagano; Masahiro Hashimoto; Hiroyuki Iwashita; Toshiyuki Suzuki; Morio Hosoya; Yasushi Ohkubo; Masao Ushida; Hideaki Mitsui
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Paper Abstract

193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. At the 32nm technology-node, the performance of photomasks, not only phase-shift masks but also binary masks, needs to be improved, especially in "resolution" and "CD accuracy". To meet sub-100nm resolution with high precision, further thinning of resist thickness will be needed. To improve CD performance, we have designed a new Cr-on-glass (COG) blank for binary applications, having OD-3 at 193nm. This simple Cr structure can obtain superior performance with the conventional mask-making process. Since the hardmask concept is one of the alternative solutions, we have also designed a multilayered binary blank. The new COG blank (NTARC) was fully dry-etched with over 25% shorter etching time than NTAR7, which is a conventional COG blank. Thinner resist (up to 200nm) was possible for NTARC. NTARC with 200nm-thick resist showed superior resolution and CD linearity in all pattern categories. On the other hand, the multilayered binary stack gives us a wide etching margin for several etching steps. Super thin resist (up to 100nm) was suitable by using a Cr-hardmask on a MoSi-absorber structure (COMS). The COMS blanks showed superior performance, especially in tiny clear patterns, such as the isolated hole pattern. We confirmed that these new photomask blanks, NTARC and COMS, will meet the requirements for 32nm-node and beyond, for all aspects of mask-making.

Paper Details

Date Published: 19 May 2008
PDF: 12 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702805 (19 May 2008); doi: 10.1117/12.793014
Show Author Affiliations
Ryugo Hikichi, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Ishii, Dai Nippon Printing Co., Ltd. (Japan)
Hidekazu Migita, Dai Nippon Printing Co., Ltd. (Japan)
Noriko Kakehi, Dai Nippon Printing Co., Ltd. (Japan)
Mochihiro Shimizu, Dai Nippon Printing Co., Ltd. (Japan)
Hideyoshi Takamizawa, Dai Nippon Printing Co., Ltd. (Japan)
Tsugumi Nagano, Dai Nippon Printing Co., Ltd. (Japan)
Masahiro Hashimoto, HOYA Corp. (Japan)
Hiroyuki Iwashita, HOYA Corp. (Japan)
Toshiyuki Suzuki, HOYA Corp. (Japan)
Morio Hosoya, HOYA Corp. (Japan)
Yasushi Ohkubo, HOYA Corp. (Japan)
Masao Ushida, HOYA Corp. (Japan)
Hideaki Mitsui, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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