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Proceedings Paper

The ultimate chrome absorber in photomask making
Author(s): Masahiro Hashimoto; Hiroyuki Iwashita; Atsushi Kominato; Hiroaki Shishido; Masao Ushida; Hideaki Mitsui
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Paper Abstract

193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. A new Cr absorber (TFC) for 193-nm attenuated phase-shift blanks was developed to meet the photomask requirements without any additional process step, such as hardmask etching. TFC was introduced with a design concept of the vertical profile for shorter etching time, the over etching time reduction. As a result, the dry-etching time was dramatically improved by more than 20% shorter than the conventional Cr absorber (TF11) without any process changes. We confirmed that 150nm-resist thickness was possible by TFC. The 32nm technology-node requirement is fully supported by TFC with thinner CAR, such as resolution and CD performance.

Paper Details

Date Published: 19 May 2008
PDF: 8 pages
Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702804 (19 May 2008); doi: 10.1117/12.793013
Show Author Affiliations
Masahiro Hashimoto, HOYA Corp. (Japan)
Hiroyuki Iwashita, HOYA Corp. (Japan)
Atsushi Kominato, HOYA Corp. (Japan)
Hiroaki Shishido, HOYA Corp. (Japan)
Masao Ushida, HOYA Corp. (Japan)
Hideaki Mitsui, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 7028:
Photomask and Next-Generation Lithography Mask Technology XV
Toshiyuki Horiuchi, Editor(s)

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