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Proceedings Paper

A methyl BN film by using tris-di-methyl-amino-boron (TMAB) for future low-K interlayer
Author(s): H. Aoki; S. Tokuyama; M. K. Mazumder; D. Watanabe; C. Kimura; T. Sugino
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Paper Abstract

A silicon-oxide-based porous methyl material such as a porous SiOCH has been investigated as a Low-K film for post 45nm node generation. However, low young modulus of porous Low-K films is serious issues in Cu/Low-K interconnection. We have investigated Low-K material of Boron Nitride containing methyl (Methyl Boron Nitride) by using Tris-di-methyl-amino-boron (TMAB) gas. This paper reports on properties of a Methyl BN film by TMAB. We have succeeded in Low-K material (K value:2.2) with Young modulus >26GPa.

Paper Details

Date Published: 11 March 2008
PDF: 6 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841W (11 March 2008); doi: 10.1117/12.792772
Show Author Affiliations
H. Aoki, Osaka Univ. (Japan)
S. Tokuyama, Osaka Univ. (Japan)
M. K. Mazumder, Osaka Univ. (Japan)
D. Watanabe, Osaka Univ. (Japan)
C. Kimura, Osaka Univ. (Japan)
T. Sugino, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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