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Proceedings Paper

New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD
Author(s): Yoshifumi Ikoma; Kenta Ono; Mutsunori Uenuma; Tomohiko Ogata; Teruaki Motooka
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Paper Abstract

We report on a new nanopore formation technique by utilizing SiC/Si(100) heteroepitaxial growth. The SiC growth onto Silicon-On-Insulator substrates was carried out by CH3SiH3 supersonic jet chemical vapor deposition. Inverse pyramidal pits surrounded by {111} facets were created in the top Si layer during the SiC heteroepitaxial growth. Randomly distributed nanopores with the diameter of ~10 nm were obtained in the top ~180 nm thick Si layer by removing the buried oxide layer under the pits. It was found that the oxide patterns on the top Si layer were effective for the site-control of the nanopore formation.

Paper Details

Date Published: 11 March 2008
PDF: 6 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841V (11 March 2008); doi: 10.1117/12.792771
Show Author Affiliations
Yoshifumi Ikoma, Kyushu Univ. (Japan)
Kenta Ono, Kyushu Univ. (Japan)
Mutsunori Uenuma, Kyushu Univ. (Japan)
Tomohiko Ogata, Kyushu Univ. (Japan)
Teruaki Motooka, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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