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Proceedings Paper

Application of redox doping in OTFTs
Author(s): Tobias W. Canzler; Ulrich Denker; Omrane Fadhel; Qiang Huang; Carsten Rothe; Ansgar Werner
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Paper Abstract

Molecular redox dopants are tested concerning their application to organic thin-film transistors (OTFT). Here we report on the feasibility of solution processing of molecular-doped transport layers, showing high air-stability of solutions and layers. We apply capacitance spectroscopy to investigate the interface of intrinsic and electrically doped layers. We also show that there is virtually no dopant migration in real devices, even when high electric fields up to 300 kV/cm2 are applied for 1000 h. We report on p- and n-type on OTFTs with silver contacts. The application of injection layers based on redox dopants improves the measured field-effect mobility by about 2 orders of magnitude.

Paper Details

Date Published: 25 August 2008
PDF: 8 pages
Proc. SPIE 7054, Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics, 70540O (25 August 2008); doi: 10.1117/12.792734
Show Author Affiliations
Tobias W. Canzler, Novaled AG (Germany)
Ulrich Denker, Novaled AG (Germany)
Omrane Fadhel, Novaled AG (Germany)
Qiang Huang, Novaled AG (Germany)
Carsten Rothe, Novaled AG (Germany)
Ansgar Werner, Novaled AG (Germany)


Published in SPIE Proceedings Vol. 7054:
Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics
Zhenan Bao; Iain McCulloch; Ruth Shinar, Editor(s)

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