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Proceedings Paper

Growth and characterization of AlN thin films on free-standing diamond substrates
Author(s): Jian Huang; Yiben Xia; Linjun Wang; Jianmin Liu; Jinyong Xu; Guang Hu; Xuefeng Zhu
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Paper Abstract

The free-standing diamond films with a smooth and high quality nucleation side were prepared by hot filament chemical vapor deposition (HFCVD) method. The nucleation side of the films had a mean surface roughness of 1.6nm.AlN films were then deposited on the nucleation side of the above diamond films by radio-frequency (RF) reactive magnetron sputtering method. The structure characteristics of AlN films deposited under different working pressure (p), sputtering power (w) and sputtering plasma composition were studied. The optimized parameters for the growth of high c-axis orientation AlN films were obtained: p=0.2Pa,w=600w and Ar/N2=3:1.Surface morphologies of AlN films deposited under these parameter, tested by means of atomic force microscope (AFM), showed that the mean surface roughness was about 4.1nm.It also had a strong c-axis orientation structure investigated by X-ray diffraction (XRD). All results above suggested that the AlN/diamond structure prepared in this work was ideal for the application of high frequency surface acoustic wave devices (SAW) device.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841S (11 March 2008); doi: 10.1117/12.792638
Show Author Affiliations
Jian Huang, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Jianmin Liu, Shanghai Univ. (China)
Jinyong Xu, Shanghai Univ. (China)
Guang Hu, Shanghai Univ. (China)
Xuefeng Zhu, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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