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Proceedings Paper

Investigations on Sb2O3 doped-SnS thin films prepared by vacuum evaporation
Author(s): Yuying Guo; Weimin Shi; Yu Zhang; Linjun Wang; Guangpu Wei
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Paper Abstract

Tin sulfide (SnS) is one of promising candidate materials for low-cost thin film solar cells because of its high absorption coefficient and suitable band-gap. The aim of this paper is to study the properties of doped-SnS thin films prepared by vacuum evaporation. Sb2O3 was used as the doping source (the weight ratio of Sb2O3 to SnS in the range from 0.1% to 0.8%). And then the Sb2O3-doped SnS thin films were annealed in the hydrogen atmosphere at different temperatures and times. The structure of all the samples was characterized by X-ray diffraction (XRD). The electrical properties of SnS thin films were investigated as well. From the results, the optimum doping content of Sb2O3 was 0.2% in weight, and the resistivity of the doped-SnS film was 42Ω•cm while that of the pure-SnS film was 99Ω•cm. In addition, the film resistivity of Sb2O3-doped SnS film decreased to 24Ω•cm with the best annealing conditions of 400°C and 3 hours.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841Q (11 March 2008); doi: 10.1117/12.792636
Show Author Affiliations
Yuying Guo, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Yu Zhang, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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