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Proceedings Paper

MOS capacitance properties of silicon-based PZT thin films
Author(s): Xiuhua Zhang; Meirong Shi; Sumei Qin; Ming Guo; Hongmei Deng; Pingxiong Yang
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Paper Abstract

Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films were grown on silicon substrates by modified So1-Gel method using C4H6O4Pb•3H2O, ZrO(NO3)2•2H2O and Ti(OC4H9) as raw materials. PbTiO3 (PT) thin film was introduced as buffer layer. The microstructures of PZT thin films were characterized by XRD and SEM. Electrical properties such as C-V and leakage current characteristics of the films was investigated. The results show that PT buffer layer was helpful to improve the dielectric and ferroelectric properties of PZT thin films. PT buffer layer prevented the interface reaction and reduced the leakage current density of PZT/PT/Si structure about 10-2 compared with that of PZT/Si structure.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841O (11 March 2008); doi: 10.1117/12.792634
Show Author Affiliations
Xiuhua Zhang, East China Normal Univ. (China)
Meirong Shi, Shanghai Univ. (China)
Sumei Qin, East China Normal Univ. (China)
Ming Guo, East China Normal Univ. (China)
Hongmei Deng, Shanghai Univ. (China)
Pingxiong Yang, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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