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Proceedings Paper

Infrared dielectric properties of BaTiO3 ultrathin films
Author(s): S. J. Liu; X. Y. Zhao; G. Pan; G. F. Su; Z. M. Huang; J. H. Chu
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Paper Abstract

Using high accurate infrared spectroscopic ellipsometry, the infrared dielectric constants of BaTiO3 ultrathin films are obtained in the temperature ranging from 20 to 150°C, which were deposited on Pt-Ti-SiO2-Si substrate by radio frequency magnetron sputtering. The high frequency dielectric function of the BaTiO3 ultrathin films shows the temperature dependence from the tetragonal to the cubic phase transition. The results suggest that the temperature dependence of the BaTiO3 ultrathin films' infrared dielectric properties should be considered in the technological applications and theoretical investigations.

Paper Details

Date Published: 11 March 2008
PDF: 5 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841N (11 March 2008); doi: 10.1117/12.792632
Show Author Affiliations
S. J. Liu, Shanghai Normal Univ. (China)
Shanghai Institute of Technical Physics (China)
X. Y. Zhao, Shanghai Normal Univ. (China)
G. Pan, Shanghai Normal Univ. (China)
G. F. Su, Shanghai Normal Univ. (China)
Z. M. Huang, Shanghai Institute of Technical Physics (China)
J. H. Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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