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Proceedings Paper

Structures and optical properties of indium doped SrTiO3 thin films by oxygen plasma-assisted pulsed laser deposition
Author(s): Yiwen Zhang; Xiaomin Li; Weidong Yu; Xiangdong Gao; Feng Wu; Jinfang Kong; Wenzhong Shen
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Paper Abstract

Undoped and In-doped SrInxTi1-xO3(x=0, 0.1, 0.2) films have been deposited on Si(100) and quartz substrates by oxygen plasma-assisted pulsed laser deposition (PLD). Effects of indium doping on the crystallinity and the optical energy band gap of SrTiO3 (STO) films were investigated. Results indicate that undoped STO film is of rather good crystallinity and low defects concentration. However indium doping deteriorates the crystallinity of the STO film, and results in the roughening of the film surface. Moreover the a-axis length monotonically increases when increasing In content. For all the films, the average transmission in the visible wavelength region (λ=400-800nm) is over 75%. The optical energy band gap of STO thin films, measured from transmittance spectra, changes from 3.67eV to 3.93eV by indium doping.

Paper Details

Date Published: 11 March 2008
PDF: 5 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841H (11 March 2008); doi: 10.1117/12.792620
Show Author Affiliations
Yiwen Zhang, Shanghai Institute of Ceramics (China)
Graduate School of the Chinese Academy of Sciences (China)
Xiaomin Li, Shanghai Institute of Ceramics (China)
Weidong Yu, Shanghai Institute of Ceramics (China)
Xiangdong Gao, Shanghai Institute of Ceramics (China)
Feng Wu, Shanghai Institute of Ceramics (China)
Graduate School of the Chinese Academy of Sciences (China)
Jinfang Kong, Shanghai Jiao Tong Univ. (China)
Wenzhong Shen, Shanghai Jiao Tong Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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