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Proceedings Paper

Pockels effect in GaN/AlxGa1-xN superlattice with different quantum structures
Author(s): P. Chen; S. P. Li; X. G. Tu; Y. H. Zuo; L. Zhao; S. W. Chen; J. C. Li; W. Lin; H. Y. Chen; D. Y. Liu; J. Y. Kang; Y. D. Yu; J. Z. Yu; Q. M. Wang
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Paper Abstract

The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/AlxGa1-xN superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55μm. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/AlxGa1-xN superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/AlxGa1-xN SL can be proposed to engineer the nonlinear responses.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841G (11 March 2008); doi: 10.1117/12.792582
Show Author Affiliations
P. Chen, Institute of Semiconductors (China)
S. P. Li, Xiamen Univ. (China)
X. G. Tu, Institute of Semiconductors (China)
Y. H. Zuo, Institute of Semiconductors (China)
L. Zhao, Institute of Semiconductors (China)
S. W. Chen, Institute of Semiconductors (China)
J. C. Li, Xiamen Univ. (China)
W. Lin, Xiamen Univ. (China)
H. Y. Chen, Xiamen Univ. (China)
D. Y. Liu, Xiamen Univ. (China)
J. Y. Kang, Xiamen Univ. (China)
Y. D. Yu, Institute of Semiconductors (China)
J. Z. Yu, Institute of Semiconductors (China)
Xiamen Univ. (China)
Q. M. Wang, Institute of Semiconductors (China)
Xiamen Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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