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Proceedings Paper

Development of amorphous silicon-based thin-film solar cells with low-temperature coefficient
Author(s): Kobsak Sriprapha; Sorapong Inthisang; Seung Yeop Myong; Shinsuke Miyajima; Akira Yamada; Porponth Sichanugrist; Makoto Konagai
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Paper Abstract

In this work, we investigated the temperature dependence of wide bandgap hydrogenated amorphous silicon (a-Si:H)-based, hydrogenated amorphous silicon oxide (a-SiO:H)-based single-junction and hydrogenated protocrystalline silicon/hydrogenated microcrystalline silicon (pc-Si:H/μc-Si:H) double-junction solar cells in order to develop solar cells which are suitable for use in high temperature region. Photo J-V characteristics were measured under AM 1.5 illumination at ambient temperature in the range of 25-75 oC. We found that, the values of temperature coefficient for conversion efficiency (TC for η) of both single- and double-junction solar cells were inversely proportional to the initial open-circuit voltage (Voc). In case of p-i-n single-junction solar cells, the typical pc-Si:H and pc-SiO:H solar cells showed the lowest TC for η of -0.21 and -0.14%/oC, respectively. The smallest TC for η of pc-SiO:H solar cell was attributed to the positive increase in TC for fill factor (FF). The TC for η of typical pc-Si:H/μc-Si:H double-junction solar cells was around -0.35%/oC with initial η around 10-12%. Since high Voc pc-Si:H/μc-Si:H double-junction solar cells exhibit low temperature dependence and highly stable η against light soaking, they are promising for use in high temperature regions. In addition, we conclude that solar cells which are suitable for use in high temperature region must be considered both high η with low temperature dependence.

Paper Details

Date Published: 10 September 2008
PDF: 12 pages
Proc. SPIE 7045, Photovoltaic Cell and Module Technologies II, 70450C (10 September 2008); doi: 10.1117/12.792521
Show Author Affiliations
Kobsak Sriprapha, National Science and Technology Development Agency (Thailand)
Sorapong Inthisang, Tokyo Institute of Technology (Japan)
Seung Yeop Myong, Korea Iron & Steel Energy Research Institute (Korea, Republic of)
Shinsuke Miyajima, Tokyo Institute of Technology (Japan)
Akira Yamada, Tokyo Institute of Technology (Japan)
Porponth Sichanugrist, National Science and Technology Development Agency (Thailand)
Makoto Konagai, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 7045:
Photovoltaic Cell and Module Technologies II
Bolko von Roedern; Alan E. Delahoy, Editor(s)

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