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Proceedings Paper

Fabrication and properties study of Cu(In1-xGax)Se2 films by vacuum evaporation
Author(s): Ai-min Li; Juan Qin; Wei-min Shi; Guang-pu Wei
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Paper Abstract

The Cu(In1-xGax)Se2 (CIGS) thin films were prepared by stacked elemental layers (SEL) method via vacuum evaporation. X-ray diffraction (XRD) analysis showed that the films were consisted of chalcopyrite CIGS phase. Scanning electronic microscopy indicated that the film surface was compact and the grain size was about 1μm. It was found that CIGS film with preparation sequence Ga/In/Cu/Se was of best crystalline quality. Besides, adding Ga greatly improved the crystallinity for all sequences compared with CIS films at the same annealing temperature.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841C (11 March 2008); doi: 10.1117/12.792406
Show Author Affiliations
Ai-min Li, Shanghai Univ. (China)
Juan Qin, Shanghai Univ. (China)
Wei-min Shi, Shanghai Univ. (China)
Guang-pu Wei, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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