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Effect of heat treatment on the property of CuInS2 thin film prepared by chemical bath deposition
Author(s): Fangming Cui; Lei Wang; Xiongfei Chen; Xia Sheng; Deren Yang; Yun Sun
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Paper Abstract

Uncrystallized copper indium disulphide (CuInS2) thin films have been deposited on ITO glass by chemical bath deposition (CBD) in acid conditions. Then polycrystalline CuInS2 films were obtained after sulfuration in sulfur atmosphere at 300°C, 350°C, 400°C and 450°C for 1.5 hours respectively. The films have been characterized by X-Ray diffraction (XRD), scanning electronic microscopy (SEM), precision surface profiler, energy dispersive X-ray analysis (EDX) and Hall effect measurement system. The results show that with the raising of heat treatment temperature the crystal degree and electrical property of the film are improved. Our work demonstrates the chemical bath deposition in acid conditions is a promising method for deposition of CuInS2 thin films for solar cells.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841A (11 March 2008); doi: 10.1117/12.792396
Show Author Affiliations
Fangming Cui, Zhejiang Univ. (China)
Lei Wang, Zhejiang Univ. (China)
Xiongfei Chen, Zhejiang Univ. (China)
Xia Sheng, Zhejiang Univ. (China)
Deren Yang, Zhejiang Univ. (China)
Yun Sun, Nankai Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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