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Proceedings Paper

Investigation of nanostructure on silicon by electrochemical etching
Author(s): Liang Xu; Jinchuan You; Lianwei Wang
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Paper Abstract

Fabrication of deep pores and trenches in nano-size will enable the embedded nanodevice integrated with silicon IC. However, the conventional dry etching method needs very expensive equipment and the process is quite complicated. Recently, electrochemical etching was developed to fabricate structures with high aspect ratio. Anodization was performed in a solution of HF with certain concentration mixed with ethanol by 1:1 in volume. The backside of the wafer was illuminated by a halogen lamp. The whole etching system was monitored by a computer system. It is found, in case of etching in a low current with 5%HF electrolyte, the size etched pores can be less than 100 nm. However, the deep trench structures becomes a line array of pores. Further work is in progress to investigate the detail.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842Z (11 March 2008); doi: 10.1117/12.792382
Show Author Affiliations
Liang Xu, East China Normal Univ. (China)
Jinchuan You, East China Normal Univ. (China)
Lianwei Wang, East China Normal Univ. (China)
State Key Lab. of Transducer Technology (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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