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Proceedings Paper

Investigation on the mechanical properties of P-doped nc-Si:H films
Author(s): Li Wang; Jinliang Wang; Jinzhao Lin; Bo Zhou; Hongyong Peng
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Paper Abstract

This paper reports mechanical properties of P-doped hydrogenated nanocrystalline silicon (nc-Si:H) films prepared by PECVD in different conditions. The basic mechanical properties of nanocrystalline silicon thin films are evaluated from load, hardness and modulus curves using a nanoindentation instrument. The effect of P-doping rate and types of substrates on mechanical properties is discussed. It is indicated that proper phosphorus-doped nanocrystalline silicon films have lower carrying capacity, but they hold ideal interface combination strength and lower surface roughness; Nanocrystalline silicon thin films on glass substrates have better distortion coordination and film-substrate bonding strength compared to films on silicon substrates. In addition, it is also expected that the thickness of thin films can be roughly estimated by the first obvious step's position on the Load-depth curves.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698411 (11 March 2008); doi: 10.1117/12.792376
Show Author Affiliations
Li Wang, Beihang Univ. (China)
Jinliang Wang, Beihang Univ. (China)
Jinzhao Lin, Beihang Univ. (China)
Bo Zhou, Beihang Univ. (China)
Hongyong Peng, Beihang Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications
Wenzhong Shen; Junhao Chu, Editor(s)

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