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Proceedings Paper

Characterization of (001)-orientated polycrystalline a-HgI2 films grown by hot wall physical vapor deposition
Author(s): Yaoming Zheng; Weimin Shi; Guangpu Wei; Juan Qin; Sheng Chen; Linjun Wang; Yiben Xia
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Paper Abstract

The highly (001)-orientated α-HgI2 film was deposited by hot wall physical vapor deposition (HWPVD) technology. The scanning electron microscopy (SEM), X-ray diffraction (XRD), dark current versus applied voltage and capacitance-frequency characteristics analysis showed that the film was compactly formed by separated columnar monocrystallines with uniform orientation along c-direction and with high resistivity (2.5×1012Ω•cm) and low dark current.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842X (11 March 2008); doi: 10.1117/12.792375
Show Author Affiliations
Yaoming Zheng, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)
Juan Qin, Shanghai Univ. (China)
Sheng Chen, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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