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Proceedings Paper

Annealing effects on exciton localization in GaNAs/GaAs epilayer
Author(s): Z. L. Liu; P. P. Chen; L. L. Ma; C. Wang; J. Shao; X. S. Chen; W. Lu
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Paper Abstract

Rapid thermal annealing effects on GaNAs/GaAs epilayer with about 1.0% N are experimentally analyzed. Both the as-grown and annealed samples are studied by photoluminescence at different temperature (11K~290K). Exciton localization and delocalization are investigated in detail. It exhibits quite different optical properties for the localized and delocalized excitons before and after annealing, this is attributed to the nitrogen reorganization inside the GaNAs layer, which homogenizes initial nitrogen composition fluctuations present in the as-grown alloy.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840Z (11 March 2008); doi: 10.1117/12.792370
Show Author Affiliations
Z. L. Liu, Shanghai Institute of Technical Physics (China)
P. P. Chen, Shanghai Institute of Technical Physics (China)
L. L. Ma, Shanghai Institute of Technical Physics (China)
C. Wang, Yunnan Univ. (China)
J. Shao, Shanghai Institute of Technical Physics (China)
X. S. Chen, Shanghai Institute of Technical Physics (China)
W. Lu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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