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Proceedings Paper

Nitrogen incorporation characteristics of 4H-SiC epitaxial layer
Author(s): Renxu Jia; Yimen Zhang; Yuming Zhang; Yuehu Wang
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Paper Abstract

Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1580°C, 100 mbar with rotation based on horizontal low-pressure hot-wall CVD (LP-HW-CVD) system to get high quality 4H-SiC epilayers. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with SEM, AFM, XRD and C-V measurement. By testing, the 4H-SiC epitaxial layer has a good crystalline structure and mirror-like surface with few surface defects. N type 4H-SiC epilayers are obtained by in-situ doping of N2. The Uniformity of doping concentration have been tested below 5%.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840V (11 March 2008); doi: 10.1117/12.792363
Show Author Affiliations
Renxu Jia, Xidian Univ. (China)
Yimen Zhang, Xidian Univ. (China)
Yuming Zhang, Xidian Univ. (China)
Yuehu Wang, Xidian Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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