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Proceedings Paper

The structural properties of O and B-O ion implanted diamond films
Author(s): X. J. Hu; J. S. Ye; Q. S. Lu; G. Q. Zheng
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Paper Abstract

The structural properties of B-O and O-implanted diamond films are investigated by using X-ray diffraction (XRD) and Raman spectrum. The results show that a sharp (111) peak of diamond can be found in XRD pattern after annealing under higher temperature, indicating the damaged diamond lattice produced by ion implantation has been restored. The calculated grain size of B-O co-implanted diamond films is smaller than that of O-implanted diamond under 1000 °C annealing, implying the introduction of boron into O-implanted diamond can hinder the grain growth under high temperature annealing. Raman measurements show that higher temperature annealing can recover the damaged lattice.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840Q (11 March 2008); doi: 10.1117/12.792354
Show Author Affiliations
X. J. Hu, Zhejiang Univ. of Technology (China)
J. S. Ye, Hangzhou Iron and Steel Group Corp. (China)
Q. S. Lu, Zhejiang Univ. of Technology (China)
G. Q. Zheng, Zhejiang Univ. of Technology (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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