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Proceedings Paper

Surface morphology of (100) ZnTe: P layer homoepitaxially grown by horizontal MOVPE technique
Author(s): K. Yamaguchi; Y. Kuramitsu; K. Saito; T. Tanaka; M. Nishio; Q. Guo; H. Ogawa
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Paper Abstract

The surface morphology and roughness of (100) P-doped ZnTe homoepitaxial layers grown by horizontal MOVPE using tris-dimethylaminophosphorus have been investigated as a function of substrate temperature under two different source transport rate conditions together with the photoluminescence property. The surface is marked by a dense ridging when the growth is limited by reaction-kinetics on the grown surface, whereas the surfaces of the layers grown in the mass-transport limited regime show morphology consisted of a series of hillocks, independent of the transport rate. The growth condition close to the transition part between the mass-transport and the surface-kinetics regimes provide an optimum growth not only for achieving a minimum surface roughness, but also for a better photoluminescence property of the as-grown P-doped ZnTe layer.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840M (11 March 2008); doi: 10.1117/12.792281
Show Author Affiliations
K. Yamaguchi, Saga Univ. (Japan)
Y. Kuramitsu, Saga Univ. (Japan)
K. Saito, Saga Univ. (Japan)
T. Tanaka, Saga Univ. (Japan)
M. Nishio, Saga Univ. (Japan)
Q. Guo, Saga Univ. (Japan)
H. Ogawa, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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