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Proceedings Paper

Electric field assisted low-temperature growth of SiGe on insulating films for future TFT
Author(s): Masanobu Miyao; Hiroshi Kanno; Taizoh Sadoh
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Paper Abstract

Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840L (11 March 2008); doi: 10.1117/12.792280
Show Author Affiliations
Masanobu Miyao, Kyushu Univ. (Japan)
Hiroshi Kanno, Kyushu Univ. (Japan)
Taizoh Sadoh, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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