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Proceedings Paper

The properties of ZnO thin films fabricated by ion beam sputtering and RF magnetron sputtering
Author(s): X. X. He; H. Q. Li; J. B. Gu; S. B. Wu; B. Cao
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Paper Abstract

ZnO thin films were prepared by two methods .One was ion beam sputtering then annealing at 700°C in O2, another was RF magnetron sputtering then annealing at 600°C in O2. The structures, morphologies, and electrical resistivities of the ZnO films prepared by two methods were investigated and compared. The influences of two different methods on properties of ZnO thin film were studied by XRD, AFM and LCR HITESTER. Compared with RF magnetron sputtering, the ZnO films fabricated by ion beam sputtering deposition have disordered growth orientation, bigger surface roughness and higher electrical resistivity.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842T (11 March 2008); doi: 10.1117/12.792278
Show Author Affiliations
X. X. He, Hefei Univ. of Technology (China)
H. Q. Li, Hefei Univ. of Technology (China)
J. B. Gu, Hefei Univ. of Technology (China)
S. B. Wu, Hefei Univ. of Technology (China)
B. Cao, Hefei Univ. of Technology (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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