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Proceedings Paper

The blue-shift effect of the ion-milling-formed HgCdTe photodiodes
Author(s): F. X. Zha; J. Shao
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Paper Abstract

Ion milling-formed n-on-p diodes of HgCdTe were studied by photoluminescence spectroscopy. A sequence of spectra measured across a square junction show that the luminescence peaks of the ion-eroded region shifted strongly to shorter wavelength than those defined by monolithic material. This shift may be well interpreted in terms of Burstein-Moss (BM) effect and is important to device fabrication.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840G (11 March 2008); doi: 10.1117/12.792273
Show Author Affiliations
F. X. Zha, Shanghai Univ. (China)
J. Shao, National Lab. for IR Physics (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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