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Proceedings Paper

Simulation of SiC deposition in a hot wall CVD reactor
Author(s): Wei Jia; Yuming Zhang; Yimen Zhang; Renxu Jia; Hui Guo
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Paper Abstract

The present study focuses on the numerical study of 4H-SiC film deposition on a horizontally 4H-SiC substrate with H2 as the carrier gas and C3H8 and SiH4 as precursors in low pressure using a hot wall CVD reactor. The growth rate along the susceptor is calculated. The effect of inlet C/Si ratio on the growth rate is investigated. Among the reacting species C2H2, CH3SiH2SiH, Si and SiH2 contribute most to growth.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842Q (11 March 2008); doi: 10.1117/12.792270
Show Author Affiliations
Wei Jia, Xidian Univ. (China)
Yuming Zhang, Xidian Univ. (China)
Yimen Zhang, Xidian Univ. (China)
Renxu Jia, Xidian Univ. (China)
Hui Guo, Xidian Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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