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Proceedings Paper

High density Si nanodots: fabrication and properties
Author(s): J. Xu; J. Zhou; X. Li; Z. Cen; D. Chen; W. Li; L. Xu; Z. Ma; K. Chen
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Paper Abstract

We propose an approach to achieve single layer of Si nanodots arrays on insulating layer by using KrF pulsed excimer laser irradiation on ultra-thin hydrogenated amorphous silicon films followed by thermal annealing. Under the suitable fabrication conditions, the area density of formed Si nanostructures can be higher than 1011cm-2 as revealed by AFM images. The size of formed Si nanodots is 3-4 nm for sample with initial a-Si:H film thickness of 4 nm. Room temperature visible light emission can be observed from laser irradiated a-Si:H film after thermal annealing. The results on electron field emission properties were also presented in this paper.

Paper Details

Date Published: 11 March 2008
PDF: 5 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840E (11 March 2008); doi: 10.1117/12.792268
Show Author Affiliations
J. Xu, Nanjing Univ. (China)
J. Zhou, Nanjing Univ. (China)
X. Li, Nanjing Univ. (China)
Z. Cen, Nanjing Univ. (China)
D. Chen, Nanjing Univ. (China)
W. Li, Nanjing Univ. (China)
L. Xu, Nanjing Univ. (China)
Z. Ma, Nanjing Univ. (China)
K. Chen, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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