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Proceedings Paper

Weak localization in indium nitride films
Author(s): X. Z. Yu; Z. Z. Jiang; Y. Yang; W. Pan; W. Z. Shen
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Paper Abstract

We have studied the weak localization (WL) effects in the electron accumulation layer on InN surface. Both the spin-orbit relaxation time τso and the electron-phonon scattering time τe-ph have been extracted from the WL analysis. We have observed that 1/τso increase with disorder and τe-ph exhibits a tendency to change gradually from the characteristic dependence 1/τe-phT3 in the pure case to the form of T2l-1 with increasing disorder.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840D (11 March 2008); doi: 10.1117/12.792265
Show Author Affiliations
X. Z. Yu, Shanghai Jiao Tong Univ. (China)
Z. Z. Jiang, Shanghai Jiao Tong Univ. (China)
Y. Yang, Shanghai Jiao Tong Univ. (China)
W. Pan, Shanghai Jiao Tong Univ. (China)
W. Z. Shen, Shanghai Jiao Tong Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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