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Proceedings Paper

Fabrication and characterization of 3D pn junction structure for radiation detection
Author(s): Tingting Liu; Tao Liu; Jinlong Li; Jilei Lin; Xiaoming Chen; Xinglong Guo; Peisheng Xin; Shaohui Xu; Weijia Xue; Lianwei Wang
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Paper Abstract

In this report, p-type macroporous silicon has been prepared by anodization. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures on this macroporous silicon. I-V and C-V measurement were employed to characterize the electrical properties. The results were compared with numeric simulation with T-SUPREM4 and MEDICI. It has been demonstrated that three-dimensional structure can increase the effective junction area and the collective efficiency remarkably, and hence improve the performance of semiconductor radiation detector.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843M (11 March 2008); doi: 10.1117/12.792237
Show Author Affiliations
Tingting Liu, East China Normal Univ. (China)
Tao Liu, East China Normal Univ. (China)
Jinlong Li, East China Normal Univ. (China)
Jilei Lin, East China Normal Univ. (China)
Xiaoming Chen, East China Normal Univ. (China)
Xinglong Guo, East China Normal Univ. (China)
Peisheng Xin, East China Normal Univ. (China)
Shaohui Xu, East China Normal Univ. (China)
Weijia Xue, Shanghai Institute of Microsystem and Information Technology (China)
Lianwei Wang, East China Normal Univ. (China)
State Key Lab. of Transducer Technology (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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