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Proceedings Paper

The heterojunction structure of n-Si/p-nanocrystalline diamond film for UV detection
Author(s): Linjun Wang; Jianmin Liu; Run Xu; Jian Huang; Weimin Shi; Yiben Xia
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Paper Abstract

A heterostructure of nanocrystalline diamond film / n-Si was fabricated successfully, where the un-doped p-type nanocrystalline diamond (NCD) film was grown by an electron assisted hot filament chemical vapor deposition (EA-HFCVD) technology. The structure and morphology of the NCD film were analyzed by Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM). I-V characteristic of the p-NCD/n-Si heterojunction indicated that this structure was rectifying in nature with a turn-on voltage of ~0.5V. The p-NCD/n-Si heterostructure was also used for UV detector applications. Operating at a bias voltage of 10V, this photodetector showed a significant discrimination between UV and visible light, and the UV/visible-blind ratio was about three orders of magnitude.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843K (11 March 2008); doi: 10.1117/12.792200
Show Author Affiliations
Linjun Wang, Shanghai Univ. (China)
Jianmin Liu, Shanghai Univ. (China)
Run Xu, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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