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Proceedings Paper

Ohmic contacts with heterojunction structure to N-type 4H-silicon carbide by N+ polysilicon film
Author(s): Hui Guo; Qian Feng; Dayong Qiao; Yuming Zhang; Yimen Zhang
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Paper Abstract

The polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM (Transfer Length Method) test patterns with polysilicon structure are formed on N-wells created by phosphorus ion (P+) implantation into Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition (LPCVD) and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/square The specific contact resistance ρc of n+ polysilicon contact to n-type 4H-SiC as low as 3.82×10-5Ωcm2 is achieved. The result for sheet resistance Rsh of the P+ implanted layers in SiC is about 4.9kΩ/square. The mechanisms for n+ polysilicon ohmic contact to ntype SiC are discussed.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843F (11 March 2008); doi: 10.1117/12.792192
Show Author Affiliations
Hui Guo, Xidian Univ. (China)
Qian Feng, Xidian Univ. (China)
Dayong Qiao, Northwestern Polytechnical Univ. (China)
Yuming Zhang, Xidian Univ. (China)
Yimen Zhang, Xidian Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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