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Proceedings Paper

Determining band offset and interface charge density of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode by C-V matching method
Author(s): J. J. Lu; Z. Z. Jiang; J. Chen; Y. L. He; W. Z. Shen
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Paper Abstract

In this paper, we report the band offset and interface charge density properties of the nc-Si:H(n)/c-Si(p) heterojunction (HJ) diode by the capacitance-voltage (C-V) measurement and theoretical modeling. By employing the ideal anisotype HJ capacitance model and numerical C-V matching method, the band offset and heterostructure interface charge density of the nc-Si:H/c-Si HJ have been obtained and analyzed. An interface charge density on the order of 1011 cm-2 is estimated via the numerical C-V matching technique, and the low interface defect density has also been confirmed by the frequency insensitive C-f results.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840B (11 March 2008); doi: 10.1117/12.792188
Show Author Affiliations
J. J. Lu, Shanghai Jiao Tong Univ. (China)
Z. Z. Jiang, Shanghai Jiao Tong Univ. (China)
J. Chen, Shanghai Jiao Tong Univ. (China)
Y. L. He, Shanghai Jiao Tong Univ. (China)
W. Z. Shen, Shanghai Jiao Tong Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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