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Proceedings Paper

CVD growth of Ge films on graded Si1-xGex: C buffers
Author(s): R. H. Wang; P. Han; Q. Mei; J. Wu; R. P. Ge; Z. L. Xie; X. Q. Xiu; S. L. Gu; Y. Shi; R. Zhang; Y. D. Zheng
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Paper Abstract

Ge films have been deposited on Si (100) substrates with graded Si1-xGex:C buffers by chemical vapor deposition (CVD) method. Based on the Auger electron spectroscopy result, a growth model for the buffers has been proposed, in which the buffers are thought to be composed of two layers. One is the Si1-xGex:C epilayer due to the reaction of GeH4, C2H4 and Si atoms diffusing up from the substrate, and the other is the Si1-xGex layer due to the reaction of Si and Ge atoms diffusing down from the Si1-xGex:C epilayer. The energy dispersive spectroscopy result indicates that Ge atoms diffuse further when the growth temperature is higher, demonstrating the growth model indirectly. With the graded buffers, epitaxial Ge films show the perfect crystalline quality, and the excellent transport property with the electron mobility approaching that of bulk Ge materials at the same doping level.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842M (11 March 2008); doi: 10.1117/12.792164
Show Author Affiliations
R. H. Wang, Nanjing Univ. (China)
P. Han, Nanjing Univ. (China)
Q. Mei, Nanjing Univ. (China)
J. Wu, Nanjing Univ. (China)
R. P. Ge, Nanjing Univ. (China)
Z. L. Xie, Nanjing Univ. (China)
X. Q. Xiu, Nanjing Univ. (China)
S. L. Gu, Nanjing Univ. (China)
Y. Shi, Nanjing Univ. (China)
R. Zhang, Nanjing Univ. (China)
Y. D. Zheng, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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