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Effects of oxygen partial pressure on the resistance switching properties of La0.7Ca0.3MnO3 thin films prepared by pulsed laser deposition method
Author(s): Weidong Yu; Xiaomin Li; Feng Wu; Dashan Shang; Lidong Chen
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Paper Abstract

The La0.7Ca0.3MnO3 (LCMO) films were prepared by the pulse laser deposition method on Pt/Ti/SiO2 /Si substrates under the O2 partial pressures of 0.01Pa, 1Pa, and 10 Pa, respectively. XRD patterns show that LCMO film grown under the O2 partial pressure of 0.01Pa exhibited good crystallinity and (110) preferred orientation. Due to the strong collision in the plume, the crystal quality of LCMO films grown under 1Pa and 10Pa decreased remarkably. Electrical measurements show that the LCMO films grown under low O2 partial pressure has stable resistance switching property. The oxygen content but crystallinity is a key factor for the resistance switching property of LCMO film. The lack of oxygen promotes the resistance switching properties of LCMO films.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698439 (11 March 2008); doi: 10.1117/12.792150
Show Author Affiliations
Weidong Yu, Shanghai Institute of Ceramics (China)
Xiaomin Li, Shanghai Institute of Ceramics (China)
Feng Wu, Shanghai Institute of Ceramics (China)
Dashan Shang, Shanghai Institute of Ceramics (China)
Lidong Chen, Shanghai Institute of Ceramics (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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