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Proceedings Paper

Voltage-controlled change of MIS reflectivity in visible and near infrared band
Author(s): J. H. Qin; J. H. Ma; Z. M. Huang; J. H. Chu
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Paper Abstract

Voltage-induced reflective changes of Pt/BLT/Si and Pt/STO/Si are investigated in visible and near infrared band. A theoretic calculation of inversion layer plasmons is set up. The most sensitive optical band and the voltage value interval causing fastest change rate are indicated. Some variance regularities are described, and this study provides the basically theoretical support for the application of an optical readout infrared imaging device: MFIS.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842F (11 March 2008); doi: 10.1117/12.792118
Show Author Affiliations
J. H. Qin, Shanghai Institute of Technical Physics (China)
J. H. Ma, Shanghai Institute of Technical Physics (China)
Z. M. Huang, Shanghai Institute of Technical Physics (China)
J. H. Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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