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Proceedings Paper

Characteristic of ZnO films prepared by the sol-gel process
Author(s): Guannan He; Bo Huang; Suntao Wu; Jing Li
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Paper Abstract

ZnO thin films with or without Al doping were grown on the glass substrates by sol-gel method and subsequently annealing treatments at high temperatures were performed to optimize films' morphologies and properties. The crystal structures of ZnO films were characterized by X-ray diffraction (XRD), and XRD spectra show a shift of (002) diffraction peak to the higher 2θ values with changing the Al-doping concentration. Optical transmittance spectrums exhibit a sharp absorption edge at around 380nm undergoing a blue shift induced by aluminum doping. An apparent particle size decreasing was displayed by scanning electron microscopy (SEM) images with the Al-doping concentration increasing.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842E (11 March 2008); doi: 10.1117/12.792117
Show Author Affiliations
Guannan He, Xiamen Univ. (China)
Bo Huang, Xiamen Univ. (China)
Suntao Wu, Xiamen Univ. (China)
Jing Li, Xiamen Univ. (China)


Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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