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Effect of LaNiO3 sol concentration on the structure and dielectric properties of Pb(Zr0.53Ti0.47)O3 thin films grown on LaNiO3 coated Ti substrates
Author(s): Xiaoyan Yang; Jinrong Cheng; Shengwen Yu; Zhongyan Meng
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Paper Abstract

Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films were deposited on LaNiO3 (LNO) buffered metal substrates by sol-gel method. The LNO buffer layer also prepared by sol-gel method serves as the template for growing PZT thin films with preferred orientation. The LNO sol is the precursor to prepare the LNO buffer layer. With the decreasing of the LNO sol concentration, the PZT films on LNO layer shows varying intensity of the XRD (100) and (110) orientation, as well as variation of the structural and dielectric properties. The PZT thin films with good dielectric properties can be obtained on LNO buffer layer with LNO-sol of 0.1mol/L.

Paper Details

Date Published: 11 March 2008
PDF: 4 pages
Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842C (11 March 2008); doi: 10.1117/12.792028
Show Author Affiliations
Xiaoyan Yang, Shanghai Univ. (China)
Jinrong Cheng, Shanghai Univ. (China)
Shengwen Yu, Shanghai Univ. (China)
Zhongyan Meng, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 6984:
Sixth International Conference on Thin Film Physics and Applications

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